Ku- and K-band internally matched high-power GaAs f.e.t. amplifiers
- 30 August 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (18) , 562-564
- https://doi.org/10.1049/el:19790404
Abstract
Internal-matching techniques, using lumped-element capacitors fabricated on high dielectric ceramics, have been developed for high power GaAs f.e.t.s in Ku- and K-bands. The developed internally matched high-power f.e.t. amplifier modules have exhibited 1.9 W power output with 4 dB associated gain at 14 GHz and 1.25 W power output with 3 dB associated gain at 18 GHz.Keywords
This publication has 1 reference indexed in Scilit:
- 15-Watt Internally Matched GaAs FETs and 20-Watt Amplifier Operating at 6 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005