Experimental characterization of power VDMOS transistors in commutation and a derived model for computer-aided design
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 4 (3) , 371-378
- https://doi.org/10.1109/63.39127
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Active protection for power MOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Discrete and integrated MOS power technologiesPhysica B+C, 1985
- Device modelingProceedings of the IEEE, 1983