Qbd− dependencies of ultrathin gate oxides on large area capacitors
- 1 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 321-324
- https://doi.org/10.1016/s0167-9317(97)00073-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolationIEEE Transactions on Electron Devices, 1994
- On dielectric breakdown in oxidized siliconJournal of Vacuum Science & Technology A, 1987