The performance of IMPATT diodes under the influence of gamma radiation
- 1 May 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 57 (5) , 852-853
- https://doi.org/10.1109/PROC.1969.7121
Abstract
IMPATT diodes have been tested under the influence of 1.85×106R/h gamma radiation from a 1.5- MeV Van de Graaf generator. No measurable change in performance has been observed during or after irradiation. A 100 to 300-fold increase in bias current was measured in the preavalanche region of operation.Keywords
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