Punktdefekte und Überstrukturerscheinungen in CdSe‐Epitaxieschichten
- 1 January 1976
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 11 (7) , 745-752
- https://doi.org/10.1002/crat.19760110707
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Stoichiometry and phase composition of vacuum deposited films of AIIBVI compoundsJournal of Crystal Growth, 1974
- Structure and morphology of obliquely deposited CdTe filmsJournal of Vacuum Science and Technology, 1974
- Electrical conduction mechanism in thin CdSe films prepared by vacuum evaporation and annealed in Se vapourThin Solid Films, 1972
- Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF2Crystal Research and Technology, 1972
- Struktur von AIIBVI‐Epitaxieschichten in Abhängigkeit von den AufdampfbedingungenCrystal Research and Technology, 1971
- Relative stability of zincblende and wurtzite structure in AIIBVI‐compoundsCrystal Research and Technology, 1971
- Oriented growth of semiconductors-VI. Stacking disorder in epitaxial indium phosphideJournal of Physics and Chemistry of Solids, 1968
- Growth of Hexagonal Crystallites in CdTe Thin FilmsPhysica Status Solidi (b), 1966
- Sur l'ionicité des liaisons dans les composés iono-covalentsJournal de Physique, 1966
- The Crystal Structure of Evaporated Gold FilmsPhysica Status Solidi (b), 1965