Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence
- 1 October 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (10A) , L1825
- https://doi.org/10.1143/jjap.27.l1825
Abstract
A Ga and As contamination layer formed on the corrugated InP substrate during the LPE growth process of DFB lasers is analyzed using the synchrotron radiation-excited X-ray fluorescence. Quantitative analysis shows that the concentrations of Ga and As are in the order of 1014 atoms/cm2 and both impurities are localized less than 50 Å from the surface. The effect of the surface corrugation on the quantitative analysis is also discussed.Keywords
This publication has 7 references indexed in Scilit:
- Grazing incidence X-ray fluorescence analysisNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- Synchrotron radiation excited x-ray fluorescence analysis using total reflection of x-raysAnalytical Chemistry, 1986
- Concentration Profile of a Dissolved Polymer near the Air-Liquid Interface: X-Ray Fluorescence StudyPhysical Review Letters, 1985
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB LasersJapanese Journal of Applied Physics, 1983
- Preserving InP surface corrugations for 1.3 μm GaInAsP/InP DFB lasers from thermal deformation during LPE processElectronics Letters, 1983
- A novel technique for GaInAsP/InP buried heterostructure laser fabricationApplied Physics Letters, 1982
- Kβ/Kα ratios in energy‐dispersive x‐ray emission analysisX-Ray Spectrometry, 1980