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A 2.3ns access time 4K ECL RAM
Home
Publications
A 2.3ns access time 4K ECL RAM
A 2.3ns access time 4K ECL RAM
FT
F. Tokuyoshi
F. Tokuyoshi
HT
H. Takemura
H. Takemura
TT
T. Tashiro
T. Tashiro
SO
S. Ohi
S. Ohi
HS
H. Shiraki
H. Shiraki
MN
M. Nakamae
M. Nakamae
TK
T. Kubota
T. Kubota
TN
T. Nakamura
T. Nakamura
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1 January 1984
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
Vol. XXVII
,
220-221
https://doi.org/10.1109/isscc.1984.1156717
Abstract
A poly load 28.0mm
2
64K×1 SRAM with a 35ns access time has been developed using 1.5μm double TaSi P-well CMOS technology.
Keywords
READ-WRITE MEMORY
RANDOM ACCESS MEMORY
DECODING
CAPACITANCE
DELAY ESTIMATION
DRIVER CIRCUITS
EPITAXIAL LAYERS
RESISTORS
BORON
ADDED DELAY
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