Themoelectric power and conductivity of As-doped a-Si:H:F
- 15 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (12) , 1090-1092
- https://doi.org/10.1063/1.91874
Abstract
Thermoelectric power and conductivity measurements on As‐doped a‐Si:H:F have been combined with exact computations of conductivity and thermopower to determine the midgap density of states (1016 eV−1 cm−3) and maximum mobility (11 cm2 V−1 sec−1). The mobility edge is found to lie significantly deeper in the gap than in a‐Si:H.Keywords
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