The impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors: an opportunity for very‐high‐efficiency solar cells?
- 10 May 2002
- journal article
- research article
- Published by Wiley in Progress In Photovoltaics
- Vol. 10 (5) , 345-353
- https://doi.org/10.1002/pip.433
Abstract
Following recent progress in the study of limiting efficiencies of photovoltaic devices with multiple energy levels, we suggest using the impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors as a means to achieve very‐high‐efficiency solar cells. We discuss the requirements for a high‐efficiency IPV device and review some of the material systems that could be used. As a case study, we investigate theoretically β‐SiC IPV solar cells with a model based on a modified Shockley–Read–Hall theory. The high‐efficiency potential is confirmed and the important issues for implementation are presented and discussed. Copyright © 2002 John Wiley &; Sons, Ltd.Keywords
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