Pressure dependence of hole mobility in In _{1−
x} Ga _x As _y P _{1−
y} and its relation to alloy scattering

19 March 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (6) , 230-232
https://doi.org/10.1049/el:19810163

Abstract

Pressure-induced changes in the hole mobility of the quaternary alloy In_1−xGa_xAs_yP_1−y up to 15 kbar indicate that alloy scattering plays an important part in the determination of the low field hole mobility.

Keywords

IN1-XGAXASYP1-Y QUATERNARY ALLOY
HOLE MOBILITY
ALLOY SCATTERING
III-V SEMICONDUCTORS
PRESSURE INDUCED CHANGES

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Pressure dependence of hole mobility in In 1− x Ga x As y P 1− y and its relation to alloy scattering

Abstract

Keywords

Pressure dependence of hole mobility in In _{1−
x} Ga _x As _y P _{1−
y} and its relation to alloy scattering