Monte Carlo simulation of hot electrons in silicon p-i-n cold cathodes

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Abstract
Monte Carlo simulation of electron transport in p‐i‐n cold cathodes yields an exponential dependence of the efficiency on the work function similar to the relation found in the experiment. The effective temperature characterizing the exponential dependence is higher in the model than in the experiment and is not equal to the calculated electron temperature. The efficiency at breakdown decreases with the intrinsic layer width and is very sensitive to the X‐X intervalley scattering rates.