Impurity-band conduction in compensated ZnSe crystals
- 1 June 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (6) , 3618-3620
- https://doi.org/10.1063/1.325234
Abstract
Hall‐coefficient and conductivity measurements performed in three single crystals of ZnSe heavily doped with indium have been reported. The In doping is found to result in nearly complete compensation of the free charge carriers, leading to the impurity‐band conduction even near room temperature instead of the normal free‐electron conduction phenomenon.This publication has 8 references indexed in Scilit:
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