A 20 GHz silicon microwave monolithic integrated circuits process and a 7.4 GHz frequency divider

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Abstract
The authors demonstrate a DNP-III (direct nitride passivated III) process for microwave Si bipolar transistors without self-aligned structures. Using this process, n-p-n transistors with 0.06- mu m-wide and 0.1- mu m-deep emitter achieved an f/sub T/ of 20 GHz. A maximum dividing frequency of 7.4 GHz at V/sub cc/=6 V was achieved for a 1/2 prescaler with a master-slave T-type flip-flop. In addition, n-p-n transistors formed by the SIC (selectively ion-implanted collector) technique in the DNP-III process achieved an f/sub T/ of 30 GHz.<>