Electrical characterization of n- and p- type GaAs films grown by molecular beam epitaxy
- 16 June 1979
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 53 (2) , K173-K176
- https://doi.org/10.1002/pssa.2210530251
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Surface segregation of Sn during MBE of n-type GaAs established by SIMS and AESJournal of Vacuum Science and Technology, 1978
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974