Development of (Pb, Nb)(Zr, Sn, Ti)O3 Film Using a Sol-Gel Process and Resulting Antiferroelectric Properties
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S) , 4154-4157
- https://doi.org/10.1143/jjap.32.4154
Abstract
(Pb, Nb)(Zr, Sn, Ti)O3 films are developed on Pt-coated Si substrates using a sol-gel process and their electronic properties are studied. An excessive amount of Pb in precursor solution is necessary to obtain films with good crystallinity. A 2.4-µm-thick film annealed at 650°C shows a dielectric constant of about 400 at room temperature. Electric field intensity at the antiferroelectric-to-ferroelectric phase transition is 80 kV/cm. Spontaneous polarization is 28 µC/cm2. Spontaneous polarization in this film is close to that observed in bulk samples (sintered at 1270°C). The electric field intensity, however, is approximately twice that of bulk samples.Keywords
This publication has 3 references indexed in Scilit:
- Large displacement transducers based on electric field forced phase transitions in the tetragonal (Pb0.97La0.02) (Ti,Zr,Sn)O3 family of ceramicsJournal of Applied Physics, 1989
- Dielectric properties of fine-grained barium titanate ceramicsJournal of Applied Physics, 1985
- Electrostriction in PZT-family antiferroelectricsFerroelectrics, 1983