TEG in LP-MO CVD Ga _0.47 In _0.53 As-InP superlattice

15 April 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (8) , 339-340
https://doi.org/10.1049/el:19820231

Abstract

We report the first successful growth of Ga_0.47In_0.53As-InP superlattice by the low-pressure metalorganic chemical vapour deposition technique, and evidence for TEG properties in these structures.

Keywords

TWO-DIMENSIONAL ELECTRON GAS PROPERTIES
LP-MO CVD GA0.47IN0.53AS-INP SUPERLATTICE
III-V SEMICONDUCTORS

TEG in LP-MO CVD Ga 0.47 In 0.53 As-InP superlattice

Abstract

Keywords

TEG in LP-MO CVD Ga _0.47 In _0.53 As-InP superlattice