Cross-coupled charge-transfer sense amplifier

1 January 1979

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 20-21
https://doi.org/10.1109/isscc.1979.1155920

Abstract

A double cross-coupled MOS charge-transfer sense amplifier for application to dynamic one-device cell memory arrays will be presented. Sensitivity is better than 1OmV.

Keywords

SOLID STATE CIRCUITS
LATCHES
VOLTAGE
PULSE AMPLIFIERS
CAPACITANCE
MOS CAPACITORS
PREAMPLIFIERS
TIMING
POWER SUPPLIES
CITIES AND TOWNS

This publication has 4 references indexed in Scilit:

A 1 mV MOS comparator
IEEE Journal of Solid-State Circuits, 1978
High sensitivity charge-transfer sense amplifier
IEEE Journal of Solid-State Circuits, 1976
Optimization of the latching pulse for dynamic flip-flop sensors
IEEE Journal of Solid-State Circuits, 1974
Storage array and sense/refresh circuit for single-transistor memory cells
IEEE Journal of Solid-State Circuits, 1972