Electronic transport in degenerate amorphous oxide semiconductors

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Abstract
The fundamental parameters associated with electronic transport, that is the scattering time, mean free path, effective mass and hence microscopic mobility for free electrons, have been estimated from the free-carrier absorption, Hall effect and dc conductivity in an optically transparent and highly conducting (degenerate) new class of amorphous oxides. No sign anomaly is observed in the Hall effect and the optical conductivity measured at room temperature obeys the classical Drude formula. The dc conductivity is proportional to temperature below room temperature, suggesting that the transport is in a weak-localization regime at these temperatures.

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