InGaAsP/InP Schottky collector phototransistor
- 22 July 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (15) , 656-657
- https://doi.org/10.1049/el:19820447
Abstract
The letter describes the first successful InGaAsP/InP transistor with an n-InP emitter, a p-In0.73Ga0.27As0.63P0.37 base and an Au Schottky collector. The device exhibited an optical gain in excess of 100 and an optical switching characteristic. The fabrication procedure is presented in the letter.Keywords
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