Spectroscopy of shallow centers in semiconductors: Progress since 1960
- 30 September 1987
- journal article
- Published by Elsevier in Physica B+C
- Vol. 146 (1-2) , 6-18
- https://doi.org/10.1016/0378-4363(87)90047-7
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Site distortion of the beryllium acceptor in germaniumPhysical Review B, 1984
- High-resolution photothermal ionization spectroscopy of lithium-related shallow donors in germaniumPhysical Review B, 1983
- Additionalandinfrared excited-state lines of gallium and indium in siliconPhysical Review B, 1982
- Stress dependence of the binding energy ofcenters in SiPhysical Review B, 1981
- Linewidths of the electronic excitation spectra of donors in siliconPhysical Review B, 1981
- Quantitative Piezospectroscopy of the 1s and 2p States of Arsenic Impurity in GermaniumAustralian Journal of Physics, 1981
- Deep sulfur-related centers in siliconJournal of Applied Physics, 1980
- Excitation spectroscopy on donor-acceptor pair luminescence in GaPPhysical Review B, 1979
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Concentration Effects on the Line Spectra of Bound Holes in SiliconPhysical Review B, 1956