A 60 dB gain 55 dB dynamic range 10 Gb/s broadband SiGe HBT limiting amplifier

Publisher Website

20 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 382-383
https://doi.org/10.1109/isscc.1999.759305

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications
IEEE Transactions on Microwave Theory and Techniques, 1998
15 Gbit/s high-gain limiting amplifier fabricatedusing Si-bipolarproduction technology
Electronics Letters, 1994
A silicon-bipolar amplifier for 10 Gbit/s with 45 dB gain
IEEE Journal of Solid-State Circuits, 1994
High-bit-rate, high-input-sensitivity decision circuit using Si bipolar technology
IEEE Journal of Solid-State Circuits, 1994