High-performance and high-yield Ka-band low-noise MMIC using 0.25- mu m ion-implanted MESFET's

1 July 1991

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters

Vol. 1 (7) , 167-169
https://doi.org/10.1109/75.84571

Abstract

The performance of LNA (low-noise amplifier) MMICs (monolithic microwave integrated circuits) in Ka-band using only ion-implantation technology is presented. Three-stage LNAs fabricated using a high-yield 0.25- mu m ion-implanted process showed a 4.2 dB average noise figure with a 15-dB gain in Ka-band. It is concluded that this relatively inexpensive technology, if maximized for the performance, shows good promise in applications where unit cost is critical and volume is high.

Keywords

MMICS
MESFETS
OPTICAL AMPLIFIERS
NOISE FIGURE
ACOUSTIC REFLECTION
COSTS
LOW-NOISE AMPLIFIERS
CIRCUITS
OPTICAL REFLECTION
LITHOGRAPHY

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