Energy- and stress-dependent hole masses in germanium and silicon

We present calculated results for several energy- and stress-dependent hole masses for uniaxial $〈001〉$, $〈111〉$, and $〈110〉$ stresses in Ge and Si: local and integrated density-of-states masses and longitudinal and transverse optical-mass components for the valence bands corresponding to $\left|M_J\right|=\frac{1}{2} \mathrm{and} \frac{3}{2}$. These masses depend on energy $E$ and stress $\sigma$ through the form $m(E,\sigma )=m\left(\frac{E}{\sigma }\right)$. The masses will be useful in the analysis of experimental luminescence and plasma absorption line shapes, as well as in the calculation of other properties of electron-hole liquids in stressed Ge and Si.