A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f/sub T/=66 GHz and f/sub max/=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 /spl Omega/ and current swings of 120 mA.Keywords
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