Recombination processes in intrinsic semiconductors using impact ionization capture cross sections in indium antimonide and mercury cadmium telluride
- 31 March 1980
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 20 (2) , 73-91
- https://doi.org/10.1016/0020-0891(80)90011-1
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Low-Temperature Recombination of Electrons and Donors in-Type Germanium and SiliconPhysical Review B, 1967
- Effect of Impurity Conduction on Electron Recombination in Germanium and Silicon at Low TemperaturesPhysical Review B, 1966
- Recombination of Electrons and Donors in-Type Germanium. BPhysical Review B, 1962
- One-dimensional overlap functions and their application to Auger recombination in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1960
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Possible Mechanism for Radiationless Recombination in SemiconductorsPhysical Review B, 1957
- A Contribution to the Recombination Statistics of Excess Carriers in SemiconductorsProceedings of the Physical Society. Section B, 1957
- Theory of the Electronic Polaron and Ionization of a Trapped Electron by an ExcitonProgress of Theoretical Physics, 1954
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952