Below band-gap electroabsorption in bulk semi-insulating GaAs
- 2 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (5) , 633-635
- https://doi.org/10.1063/1.109973
Abstract
Electroabsorption measurements of bulk semi-insulating GaAs using a pulsed applied voltage are presented for the wavelength range 890–920 nm and compared with results of the same measurement using a dc applied voltage. In the latter case, field inhomogeneities in the GaAs gives a spatially dependent absorption which thwarts extraction of the absorption coefficient versus electric field. We circumvent this problem by transiently measuring the absorption during a pulsed bias voltage when the field in the sample is nearly uniform.Keywords
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