Far-infrared detection using photoconductivity of negative donor ion states in silicon
- 1 May 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (9) , 446-448
- https://doi.org/10.1063/1.89446
Abstract
Far‐infrared detection using the bulk photoconductivity associated with negative donor ion states in silicon is found to provide nanosecond response times and quantum efficiencies of a few percent. It is estimated that this detector can be used in a heterodyne receiver with NEP’s in the range from 10−16 to 10−19 W/Hz in the wavelength range from 100 to 500 μm.Keywords
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