Luminescence of rare‐earth‐activated Ga‐containing oxides by low‐energy electron excitation

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Abstract
Abstract— It was previously reported that the thermoluminescence intensity increases with an increase in Ga content in Y3(Al1−xGax)5O12:Tb3+ and LaAl1−xGaxO3:Tm3+. This fact suggests that electrical conductivity may be also increased with Ga content, because traps responsible for thermoluminescence can supply free electrons. In this work a correlation is found between the Ga content and electrical conductivity of the above phosphors, which was measured by means of the threshold anode voltage of vacuum‐fluorescent displays (VFDs) using these phosphors, where the anode current or luminance builds up. In a series of Y3(Al1−xGax)5O12:Tb3+, the maximum efficiency is obtained at the composition x = 0.4; it is about 50% higher than the efficiency of ZnGa2O4:Mn2+. Incorporation of In also decreases the threshold voltage, but it decreases the efficiency as well. The traps supplying carriers can be ascribed to oxygen vacancies and/or Ga+.

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