Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers
- 16 September 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (19) , 845-847
- https://doi.org/10.1049/el:19820575
Abstract
Ultra-low-threshold semiconductor diode lasers were fabricated by forming buried heterostructures from MBE-grown graded-index waveguide, separate-confinement heterostructure (GRIN-SCH) wafers. CW threshold currents as low as 2.5 mA for 250 μm cavity length, output power as high as 20 mW/mirror and external quantum efficiency as high as 80% were obtained.Keywords
This publication has 0 references indexed in Scilit: