Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime

Preprint

30 July 2007

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.0707.4475

Abstract

It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.

Keywords

SEMICONDUCTOR/FERROMAGNET JUNCTIONS
VOLTAGE CHARACTERISTICS
BLOCKADE REGIME
CURRENT VOLTAGE
CURRENT DENSITY
SPIN BLOCKADE
STABILIZATION
FERROMAGNET

All Related Versions

Version 1, 2007-07-30, ArXiv
Published version: Physical Review B, 77 (7), 073301.

This publication has 0 references indexed in Scilit: