Characteristics of Ti-indiffused waveguides in MgO-doped LiNbO 3
- 25 October 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (22) , 902-904
- https://doi.org/10.1049/el:19840613
Abstract
Diffusion parameters are determined from prism coupler measurements on optical waveguides formed by Ti diffusion in LiNbO3 doped with 5% MgO. The diffusion coefficient is 3–4 times smaller than for similar waveguides in undoped LiNbO3. The Ti depth profile is shown to be Gaussian by SIMS analysis.Keywords
This publication has 0 references indexed in Scilit: