Extremely low noise InGaAs/InAIAs HEMT grown by MOCVD

19 August 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (17) , 1557-1558
https://doi.org/10.1049/el:19931038

Abstract

MOCVD-grown InGaAs/InAIAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of ̃15dB at 12 GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.

Keywords

0.42 DB
CERAMIC PACKAGES
HEMT
T-GATE
0.3 DB
15 DB
NOISE PERFORMANCE
12 GHZ
MOCVD
SHF
MINIMUM NOISE FIGURE
INGAAS-INALAS
LOW NOISE DEVICE

This publication has 0 references indexed in Scilit: