The influence of illumination on the majority-carrier quasi-fermi-level in the Schottky-barrier diode
- 31 October 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (10) , 889-895
- https://doi.org/10.1016/0038-1101(81)90108-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Recombination in the space-charge region of Schottky barrier solar cellsSolid-State Electronics, 1980
- Application of the superposition principle to solar-cell analysisIEEE Transactions on Electron Devices, 1979
- Recombination beneath ohmic contacts and adjacent oxide covered regionsSolid-State Electronics, 1979
- Recombination velocity effects on current diffusion and imref in schottky barriersSolid-State Electronics, 1971
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955