Very high characteristic temperature and constantdifferential quantumefficiency 1.3 µm GaInAsP/InP strained-layer quantum well lasersby use of temperature dependent refrectivity (TDR) mirror
- 23 June 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (13) , 1064-1065
- https://doi.org/10.1049/el:19940743
Abstract
A very high characteristic temperature of 150K (25–70°C) or 450K (25–50°C) and almost constant differential quantum efficiency operation were achieved in 1.3 µm GaInAsP/InP strained-layer quantum well lasers by the use of a novel temperature dependent reflectivity mirror composed of multiple quarter-wavelength thickness a-Si/SiOx dielectric films with quarter-wavelength shift in the centre.Keywords
This publication has 2 references indexed in Scilit:
- High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasersElectronics Letters, 1993
- Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstrationApplied Physics Letters, 1992