InSb n -channel enhancement mode MISFET grown by molecular beam epitaxy

16 February 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (4) , 289-290
https://doi.org/10.1049/el:19890201

Abstract

InSb n-channel enhancement mode MISFETs have been fabricated in homoepitaxial material grown by molecular beam epitaxy. Silicon doping during growth of the epitaxial layers was used to form the source and drain junctions. The output characteristics are of the classical type, with a maximum g_m of 12 mS/mm, corresponding to a surface electron mobility of 3–4 × 10⁴cm²/Vs at liquid nitrogen temperature.

Keywords

12 MS
ENHANCEMENT MODE
N-CHANNEL
IR DETECTOR
MOLECULAR BEAM EPITAXY
III-V SEMICONDUCTORS
MBE
INSB:SI
FABRICATION
MISFET
HOMOEPITAXIAL MATERIAL

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