Substrate-Induced Raman Frequency Variation for Single-Walled Carbon Nanotubes

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Abstract
We report on the monotonic Raman frequency shift and intensity variation when a laser spot moves along the same single-walled carbon nanotube (SWNT) for both the radial-breathing mode (RBM) and the G-band. Our substrates are Si wafers coated with thermal oxide, and trenches with widths of 1−80 μm are etched in the SiO2 by photolithography and reactive ion etching. SWNTs are grown by chemical vapor deposition and lie on top of the SiO2 and across the trenches. When the laser spot moves from the middle of the trench to the SiO2 region along the nanotube, we observe a clear upshift in the RBM and G-band frequencies and a decrease of intensity. The effect is more significant with large (∼2 nm) diameter nanotubes and appears to be chirality dependent. These studies provide important information about environmental effects on single-walled carbon nanotube resonant Raman spectroscopy.