Broad‐Area Photoelectrochemical Etching of n‐Type Beta ‐ SiC
- 1 August 1993
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 140 (8) , L123-L125
- https://doi.org/10.1149/1.2220722
Abstract
Wafer‐scale etching of is demonstrated using UV‐lamp‐assisted photoelectrochemical etching in conjunction with photolithographically defined masks. The process exhibits high etch rates and dopant selectivity, features not available using other etching methods.Keywords
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