A Controllable Etchant for Fabrication of GaSb Devices

Abstract
A survey of conventional etchants for shows them to be inappropriate for . The reasons for this are investigated and a novel etch for proposed. This etchant, consisting of (tartrate) solutions, gives controllable etch rates from 0.1 to 2.0 μm min−1. Smooth surfaces free from etch pits and surface films are obtained.

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