Length dependence of threshold current in multiple quantum well lasers
- 15 September 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (19) , 1218-1220
- https://doi.org/10.1049/el:19880828
Abstract
The threshold current density of single-quantum-well lasers increases at short laser lengths more rapidly than for multiple-well lasers. Using microscopic gain calculations, these differences are shown to be a natural consequence of the nonlinear gain/current relation associated with high electron concentrations in thin wells. The threshold current shows a minimum that depends on facet reflectivities and number of wells.Keywords
This publication has 1 reference indexed in Scilit:
- Long-Wavelength Semiconductor LasersPublished by Springer Nature ,1986