VHF/UHF Composite Resonator on a Silicon Substrate
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (S3)
- https://doi.org/10.7567/jjaps.22s3.139
Abstract
Thin film bulk wave resonators consisting of a piezoelectric film and a diaphragm made by anisotropic etching of silicon have been studied. A ZnO/SiO2 composite gives temperature coefficient of frequency of +7 to +45 ppm/°C. The sputter deposited SiO2 has given a Q-factor of 1250 and is more suitable for obtaining a high Q resonator than the thermal SiO2. Using a combination of the AlN film and p+ +Si, even a thick composite of several µm each which is reproducible and stable for a practical application has given a resonance frequency higher than 500 MHz.Keywords
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