H-MOS reliability
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (1) , 48-51
- https://doi.org/10.1109/t-ed.1979.19378
Abstract
H-MOS is a new high-performance n-channel technology with a 1-pJ speed power product. This technology is the result of scaling MOS device dimensions. The effect of thinner oxide integrity and hot electron injection are investigated. A screening technique for thin oxides using high-voltage stressing is presented. Threshold shifts due to hot electron injection were observed to be less than 1 mV. Operating lifetest data predict a failure rate of 0.017 percent/1000 h on 4K static RAM's built on H-MOS.Keywords
This publication has 2 references indexed in Scilit:
- A high performance 4K static RAM fabricated with an advanced MOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Electromigration failure modes in aluminum metallization for semiconductor devicesProceedings of the IEEE, 1969