Recombination Activity of Misfit Dislocations in Silicon
- 16 June 1993
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 137 (2) , 327-335
- https://doi.org/10.1002/pssa.2211370206
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Cathodoluminescence imaging and spectroscopy of dislocations in Si and Si1−xGex alloysApplied Physics Letters, 1992
- Characterization of epitaxial and oxidation-induced stacking faults in silicon: The influence of transition-metal contaminationApplied Physics Letters, 1992
- Characterisation of Dislocations in the Presence of Transition Metal ContaminationMaterials Science Forum, 1992
- Characterisation of Extended Defects in Si and Si1−x Gex Alloys: The Influence of Transition Metal ContaminationMRS Proceedings, 1992
- The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTAMRS Proceedings, 1991
- DETECTION OF DISLOCATION-RELATED PHOTOLUMINESCENCE BANDS IN SI-GE ALLOYS GROWN BY LIQUID PHASE EPITAXYPublished by Elsevier ,1990
- Defect Engineering for ULSI Epitaxial SiliconSolid State Phenomena, 1989
- Dislocation-related photoluminescence in siliconApplied Physics A, 1985
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- On the sensitivity of the EBIC technique as applied to defect investigations in siliconPhysica Status Solidi (a), 1981