HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS
Open Access
- 1 October 1981
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 42 (C4) , C4-779
- https://doi.org/10.1051/jphyscol:19814170
Abstract
The hydrogen concentration cH and its spatial distribution in a series of glow discharge a-Si specimens, doped in the gas phase or by ion implantation, have been investigated by the 15N nuclear reaction. The results show : (i) cH in the bulk of gas phase doped material depends on the gaseous doping ratios ; (ii) cH in the surface generally deviates from cH in the bulk within a depth of about 500 Å ; (iii) in specimens doped by ion implantation εf can be moved throughout the mobility gap without producing changes in cHKeywords
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