Anomalous excitation-intensity dependence of photoluminescence properties of an asymmetric coupled quantum well structure

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Abstract
We report anomalous emission peak shifts as a function of excitation intensity in photoluminescence spectra from a p‐i‐n structure where asymmetric coupled quantum wells are embedded in the intrinsic region. Emission behavior can be explained in terms of an anticrossing of quantized levels: this occurs when the energy‐band structure automatically becomes flat by means of reduction of the internal electric field by photogenerated carriers. This result may be of significance in creating novel all‐optical devices where transition energies are able to be optically modulated.