Precisely controlled shallow p+ diffusions in GaAs
- 15 February 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 267-269
- https://doi.org/10.1063/1.92301
Abstract
Precisely controlled shallow p+ diffusions have been made in GaAs using ZnO/SiO2 as a doped oxide source for zinc, and a layer of phosphosilicate glass as a cap. Diffusions were made in an open‐tube system with a nitrogen gas ambient, and exhibit a junction depth reproducibility of better than ±5%. The technique is shown to be relatively insensitive to all process parameters other than diffusion time and temperature, and to be comparable in convenience and ease to diffusion in silicon.Keywords
This publication has 7 references indexed in Scilit:
- Open tube diffusion of zinc in gallium arsenideIEEE Electron Device Letters, 1980
- High Surface Concentration Zn Diffusion in GaAsJournal of the Electrochemical Society, 1976
- Anodic Oxidation of GaAs in Mixed Solutions of Glycol and WaterJournal of the Electrochemical Society, 1976
- Zn Diffusion in GaAs under Constant As PressureJournal of the Electrochemical Society, 1976
- PSG masks for diffusions in gallium arsenideIEEE Transactions on Electron Devices, 1972
- Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAsPhysical Review B, 1963
- Diffusion of zinc in gallium arsenideJournal of Physics and Chemistry of Solids, 1960