Far-infrared photo–Hall experiments on GaAs:Si
- 1 May 1989
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America B
- Vol. 6 (5) , 1030-1034
- https://doi.org/10.1364/josab.6.001030
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 9 references indexed in Scilit:
- Free-electron laser study of the nonlinear magnetophotoconductivity in n-GaAsApplied Physics Letters, 1988
- Metal-insulator transitions in non-crystalline systemsAdvances in Physics, 1985
- Variable-range-hopping conductivity in compensated-type GaAsPhysical Review B, 1984
- Nonlinear Far-Infrared Magnetoabsorption and Optically Detected Magnetoimpurity Effect in-GaAsPhysical Review Letters, 1983
- High power FIR photoconductivity in n-GaAsInternational Journal of Infrared and Millimeter Waves, 1980
- Mechanism of cyclotron resonance induced conductivity in n-GaAsSolid State Communications, 1978
- The theory of semiconductor magnetoplasmon-polariton surface modes: Voigt geometryJournal of Physics C: Solid State Physics, 1978
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960