Dry etching of III–V semiconductors: influence of substrate temperature on the anisotropy and induced damage
- 31 December 1990
- Vol. 41 (4-6) , 906-908
- https://doi.org/10.1016/0042-207x(90)93818-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contactsJournal of Vacuum Science & Technology B, 1984
- Summary Abstract: Effect of ion sputtering on the interface chemistry and electrical properties of Au/n-GaAs(100) Schottky contactsJournal of Vacuum Science & Technology A, 1984
- Temperature Dependence of InP and GaAs Etching in a Chlorine PlasmaJournal of the Electrochemical Society, 1982