Towards a Ge-based laser for CMOS applications
- 1 January 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 19492081,p. 16-18
- https://doi.org/10.1109/group4.2008.4638081
Abstract
We report experimental observation of direct band gap photoluminescence (PL) and optical bleaching of band-engineered epitaxial Ge-on-Si at room temperature, confirming that this material is a promising candidate for efficient light emitting devices on Si.Keywords
This publication has 8 references indexed in Scilit:
- High performance, waveguide integrated Ge photodetectorsOptics Express, 2007
- Optical modulator on silicon employing germanium quantum wellsOptics Express, 2007
- Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on SiOptics Express, 2007
- 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrateOptics Express, 2007
- Electronic-photonic integrated circuits on the CMOS platformPublished by SPIE-Intl Soc Optical Eng ,2006
- Deformation potential constants of biaxially tensile stressedepitaxial films onPhysical Review B, 2004
- Strain-induced band gap shrinkage in Ge grown on Si substrateApplied Physics Letters, 2003
- High-quality Ge epilayers on Si with low threading-dislocation densitiesApplied Physics Letters, 1999