Electronic structure of GaAs-AlGaAs heterojunctions in parallel magnetic fields
- 1 April 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (4) , 575-584
- https://doi.org/10.1088/0268-1242/8/4/016
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Inter-subband scattering rates in GaAs-GaAlAs heterojunctionsSemiconductor Science and Technology, 1990
- Wavelength-dependent photoconduction effects on the second sub-band occupancy in (Al, Ga)As/GaAs heterojunctionsSemiconductor Science and Technology, 1987
- Magnetic depopulation of sub-bands in In0.53Ga0.47As/In0.52Al0.48As heterojunctionsJournal of Physics C: Solid State Physics, 1986
- Subband-Landau level coupling in a two-dimensional electron gas in tilted magnetic fieldsJournal of Physics C: Solid State Physics, 1986
- A study of intersubband scattering in GaAs/AlxGa1−xAs heterostructures by means of a parallel magnetic fieldSolid State Communications, 1983
- Quantum transport in GaInAs-AlInAs heterojunctions, and the influence of intersubband scatteringSolid State Communications, 1982
- Observation of intersubband scattering in a 2-dimensional electron systemSolid State Communications, 1982
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966