Solution growth of variable gap Pb1−xHgxS films for infrared detectors
- 1 September 1976
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 11 (9) , 1109-1113
- https://doi.org/10.1016/0025-5408(76)90009-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Plasma edge and band structure of cubic HgSSolid State Communications, 1970
- Review of the Pb1−x Snx Chalcogenide SemiconductorsJournal of Vacuum Science and Technology, 1970
- Preparation and Properties of Pb1−x Snx Te Epitaxial FilmsJournal of Vacuum Science and Technology, 1970
- Growth and Properties of Hg1−xCdxTe Epitaxial LayersJournal of Applied Physics, 1969